PROF. WU-CHING CHOU

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​Title: Study of GaN high electron mobility transistors for the high power and high frequency device applications

Abstract: High-frequency, high-power GaN high electron mobility transistors (HEMTs) are critical components in applications such as mobile communications, electric vehicle energy management, artificial intelligence (AI) server power supplies, and satellite systems. However, challenges remain in achieving high breakdown voltage, low contact resistance, high sheet carrier density, and enhanced electron mobility to further improve GaN HEMT performance. Recently, we demonstrated that inserting an InN nano-mask into the low-temperature GaN buffer layer significantly reduces dislocation density and increases breakdown voltage. The layer-resolved dislocation density distribution and stress evolution in GaN HEMTs were revealed using X-ray nano-diffraction. Furthermore, employing a GaN:C film on a GaN:Fe buffer effectively reduces buffer leakage current and suppresses Fe diffusion.

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Prof. Wu-Ching Chou received his Ph.D. degree in Physics at State University of New York at Buffalo, USA in 1992. He is currently a full professor at the Department of Electrophysics, National Yang Ming Chiao Tung University, Taiwan.  His research interests include Molecular Beam epitaxy of ZnO-based and GaN-based Photonics and Magnetic Semiconductors, Optical Spectroscopy and Cathodo-luminescence of Semiconductors, Condensed Matter Physics